Tip-gating Effect in Scanning Impedance Microscopy of Nanoelectronic Devices

Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and non-invasive mode. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously an electrostatic probe of local potential. A class of weak defects becomes observable even if they are located in the vicinity of strong defects. The imaging mechanism of tip-gating scanning impedance microscopy is discussed.Comment: 11 pages, 3 figures, to be published in Appl. Phys. Let

Carbon nanotubes as a tip calibration standard for electrostatic scanning probe microscopies

Scanning Surface Potential Microscopy (SSPM) is one of the most widely used techniques for the characterization of electrical properties at small dimensions. Applicability of SSPM and related electrostatic scanning probe microscopies for imaging of potential distributions in active micro- and nanoelectronic devices requires quantitative knowledge of tip surface contrast transfer. Here we demonstrate the utility of carbon-nanotube-based circuits to characterize geometric properties of the tip in the electrostatic scanning probe microscopies (SPM). Based on experimental observations, an analytical form for the differential tip-surface capacitance is obtained.Comment: 14 pages, 4 figure

Coulomb-Modified Fano Resonance in a One-Lead Quantum Dot

We investigate a tunable Fano interferometer consisting of a quantum dot coupled via tunneling to a one-dimensional channel. In addition to Fano resonance, the channel shows strong Coulomb response to the dot, with a single electron modulating channel conductance by factors of up to 100. Where these effects coexist, lineshapes with up to four extrema are found. A model of Coulomb-modified Fano resonance is developed and gives excellent agreement with experiment.Comment: related papers available at http://marcuslab.harvard.ed

Effect of Exchange Interaction on Spin Dephasing in a Double Quantum Dot

We measure singlet-triplet dephasing in a two-electron double quantum dot in the presence of an exchange interaction which can be electrically tuned from much smaller to much larger than the hyperfine energy. Saturation of dephasing and damped oscillations of the spin correlator as a function of time are observed when the two interaction strengths are comparable. Both features of the data are compared with predictions from a quasistatic model of the hyperfine field.Comment: see related papers at http://marcuslab.harvard.ed

Demonstration of Robust Quantum Gate Tomography via Randomized Benchmarking

Typical quantum gate tomography protocols struggle with a self-consistency problem: the gate operation cannot be reconstructed without knowledge of the initial state and final measurement, but such knowledge cannot be obtained without well-characterized gates. A recently proposed technique, known as randomized benchmarking tomography (RBT), sidesteps this self-consistency problem by designing experiments to be insensitive to preparation and measurement imperfections. We implement this proposal in a superconducting qubit system, using a number of experimental improvements including implementing each of the elements of the Clifford group in single `atomic' pulses and custom control hardware to enable large overhead protocols. We show a robust reconstruction of several single-qubit quantum gates, including a unitary outside the Clifford group. We demonstrate that RBT yields physical gate reconstructions that are consistent with fidelities obtained by randomized benchmarking

4D BADA-based Trajectory Generator and 3D Guidance Algorithm

This paper presents a hybrid integration between aerodynamic, airline procedures and other BADA-based (Base of Aircraft Data) coefficients with a classical aircraft dynamic model. This paper also describes a three-dimensional guidance algorithm implemented in order to produce commands for the aircraft to follow a flight plan. The software chosen for this work is MATLAB

Role of Single Defects in Electronic Transport through Carbon Nanotube Field-Effect Transistors

The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field effect at discrete defects along the CNFET length. The depletion surface potential of individual defects is quantified from the SGM-imaged radius of the defect as a function of tip bias voltage. This provides a measure of the Fermi level at the defect with zero tip voltage, which is as small as 20 meV for the strongest defects. The effect of defects on transport is probed by SIM as a function of backgate and tip-gate voltage. When the backgate voltage is set so the CNFET is "on" (conducting), SIM reveals a uniform potential drop along its length, consistent with diffusive transport. In contrast, when the CNFET is "off", potential steps develop at the position of depleted defects. Finally, high-resolution imaging of a second set of weak defects is achieved in a new "tip-gated" SIM mode.Comment: to appear in Physical Review Letter